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SpecificationsCL(IDD) 10 cyclesRow Cycle Time (tRCmin) 48.125ns (min.)Refresh to Active/Refresh 260ns (min.)Command Time (tRFCmin)Row Active Time (tRASmin) 37.5ns (min.)Maximum Operating Power TBD W*UL Rating 94 V - 0Operating Temperature 0oC to 85o CStorage Temperature -55oC to +100o C*Power will vary depending on the SDRAM used.FEATURES• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply• VDDQ = 1.5V (1.425V ~ 1.575V)• 800MHz fCK for 1600Mb/sec/pin• 8 independent internal bank• Programmable CAS Latency: 11, 10, 9, 8, 7, 6• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock• 8-bit pre-fetch• Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]• Bi-directional Differential Data Strobe• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)• On Die Termination using ODT pin• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C• Asynchronous Reset• PCB : Height 1.180" (30.00mm), single sided component